Samsung unveils new HBM3E 12H memory chip with “highest capacity” for AI

by alex

Samsung Electronics has announced a new high-bandwidth memory chip that has the “highest capacity” in the industry. The South Korean giant claims that the HBM3E 12H “increases productivity by more than 50%.”

AI service providers are increasingly demanding HBMs with higher capacity, and our new product HBM3E 12H was designed to meet this need.

This new memory solution is part of our commitment to develop core technologies for high-stack HBM drives and provide technology leadership in the high-capacity drive market in the era of artificial intelligence

—Yongcheol Bae, executive vice president of memory products at Samsung Electronics.

Samsung представила новый чип памяти HBM3E 12H с «высшей емкостью» для ИИ

Samsung Electronics is the world's largest manufacturer of dynamic random access memory chips, which are used in consumer devices such as smartphones and computers.

Generative AI models such as OpenAI's ChatGPT require large numbers of high-performance memory chips. They allow generative AI models to remember details of past conversations and user preferences to generate human-like responses.

Samsung said it has already started providing samples to customers, and mass production of the HBM3E 12H is scheduled for the first half of 2024. In September, Samsung entered into an agreement to supply Nvidia with its high-bandwidth memory chips, CNBC reports.

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HBM3E 12H has a 12-layer stack, but adopts advanced thermo-compression non-conductive film, which allows 12-layer products to be as tall as 8-layer products to meet current HBM packaging requirements. The result is a chip that contains more capacity in the same physical size.

Samsung continues to reduce the thickness of its NCF material and has achieved the industry's thinnest chip gap of seven micrometers (µm) while eliminating voids between layers. These efforts resulted in an increase in vertical density of more than 20% compared to HBM3 8H.

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