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Researchers at the Korea Advanced Institute of Science and Technology (KAIST) in South Korea have developed a new type of phase-change memory that does not have the disadvantages of previous iterations of this technology.
Phase change memory, or PCM for short, works by transitioning between two physical states: crystallized (low resistance) and amorphous (high resistance). It optimally combines the properties of DRAM and NAND flash memory.
DRAM is fast but volatile, meaning the data stored in it disappears if the power is lost. NAND used in SSD can retain data even when power is removed, but is slower than DRAM.
PCM is a fast and non-volatile memory type, but traditionally expensive to manufacture and power hungry. Heat is required to melt the phase material into an amorphous state, which hinders energy efficiency. Previous efforts to address high power consumption have focused on reducing the physical size of the device using advanced lithography techniques. The improvements were nominal, and the increase in cost and complexity associated with manufacturing was not justified.
Professor Shinhyun Choi and his team developed a method to reduce only the components that are directly involved in the phase change process to create a phase-variable nanothread. The new approach reduces power consumption by 15 times compared to traditional phase-change memory and is also much cheaper to manufacture.
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The new memory retains many of the characteristics of traditional memory, such as high speed, large on/off ratio, small variations and multi-level memory properties.
The researchers expect their findings to become the basis for future electronic engineering. The team's research was published in the journal Nature in early April.
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