Samsung began production of new generation V-NAND memory: +33% performance, -10% power consumption

by alex

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Samsung начала производство памяти V-NAND нового поколения: +33% производительности, -10% энергопотребления

Samsung начала производство памяти V-NAND нового поколения: +33% производительности, -10% энергопотребления

Samsung has announced the start of mass production of 9th generation V-NAND flash memory, which offers a 33% increase over the current one. TCL's 1Tbit V-NAND starts production this month, with QLC arriving in the second half of 2024. Previously, the start of production was confirmed by unofficial sources, from which it is also known that the memory has 290+ layers.

“We are excited to introduce the industry's first 9th generation V-NAND, taking the future of applications a step further. To meet the demand for NAND flash memory solutions, Samsung has pushed the boundaries in cell architecture and operating design for our next generation product. With our latest V-NAND, Samsung will continue to set trends in the high-performance, high-density solid-state drive (SSD) market that meets the needs of the next generation of AI,” said SungHoi Hur, Head of Flash Products and Memory Technologies at Samsung Electronics.

According to the company, the bit density of Gen 9 V-NAND is approximately 50% higher compared to Gen 8 V-NAND. New technologies to avoid cell interference and extend cell life have improved memory quality and reliability, and the elimination of bogus holes in channels has significantly reduced cell area.

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Samsung's Channel Hole Etching technology creates electronic paths through mold stacking and maximizes manufacturing productivity by simultaneously processing the industry's highest number of cell layers in a dual structure.

V-NAND 9th generation is equipped with a new generation NAND Toggle 5.1 flash interface, which supports increased I/O data speed by 33% to 3.2 Gbps. Power consumption has been improved by 10%.

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The Technology section is published with the support of Favbet Tech

Samsung начала производство памяти V-NAND нового поколения: +33% производительности, -10% энергопотребления

Samsung начала производство памяти V-NAND нового поколения: +33% производительности, -10% энергопотребления

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