Micron also made a mark at MWC 2024 – the leading American chipmaker announced the “most compact” flash memory module of the UFS 4.0 standard, whose dimensions are only 9×13 millimeters. The memory capacity still reaches 1 TB, and the maximum sequential read and write speeds are 4300 and 4000 MB/s, respectively.
The new product is aimed at future flagship smartphones. The chip is designed based on 232-layer 3D NAND memory jointly by Micron laboratories in the USA, China and Korea – in response to the request of manufacturers to free up space inside the case for installing larger batteries.
New Micron memory for new generation flagship smartphones
Current line of Micron memory modules for smartphones
Micron engineers managed to make the UFS 4.0 chip 20% more compact than the previous model with dimensions of 11×13 mm, presented in June last year. Further miniaturization (reduction of area) provided the desired reduction in power consumption without loss of overall performance.
At the same time, Micron introduced HPM (High-Performance Mode), a patented feature that optimizes performance during intensive smartphone use, namely: after activating HPM, memory performance increases by 25%.
Micron has already started sending out the first samples of UFS 4.0 to its key customers in three versions – 256 GB, 512 GB and 1 TB. We expect the first smartphones with Micron UFS 4.0 memory to appear in the second half of 2024.
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