Probably its throughput is at least 1.7 TB/s
Samsung has produced the first sample of a 16-layer HBM memory stack.
The sample worked fine, but the company is not yet going to launch such chips into mass production. Apparently, such stacks will become widespread with the release of HBM4, and before that there is at least two more years.
The ability to create such a large stack was thanks to the hybrid connection technology that Samsung was able to use for all layers. A hybrid interconnect may be more advantageous because it allows more layers to be added without the need for vias.
Recall that a month ago Samsung introduced a record-breaking capacity HBM3E 12H memory with a capacity of 36 GB per stack with a bandwidth of 1.28 TB/s. In this case, the stack consists of 12 layers, but this is the first such product, whereas the usual HBM stack now consists of eight layers.
The peculiarity of HBM memory is that the more layers the stack contains, the higher the capacity and bandwidth. That is, if the current generation HBM3E memory had 16 layers, the throughput would reach 1.7 TB/s, and in the case of HBM4 it will be even higher.